Скачать даташит для rmw280n03:

Data Sheet 4.5V Drive Nch MOSFET RMW280N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET PSOP8 (8) (7) (6) (5) Features 0 0.1 1) High Power package(PSOP8). 1pin mark 2) High-speed switching,Low On-resistance. (1) (2) (3) (4) 0.22 0.4 0.9 3) Low voltage drive(4.5V drive). 1.27 5.0 Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit (pieces) 2500 RMW280N03 (1) Source (2) Source 2 (3) Source (4) Gate 1 (5) Drain Absolute maximum ratings (Ta = 25 C) (6) Drain (7) Drain Parameter Symbol Limits Unit (1) (2) (3) (4) (8) Drain Drain-source voltage VDSS 30 V 1 ESD PROTECTION DIODE 2 BODY DIODE Gate-source voltage VGSS 20 V Continuous ID 28 A Drain current Pulsed IDP *1 112 A Continuous IS 2.5 A Source current (