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RQ5H020SP Pch -45V -2.0A Power MOSFET Data Sheet lOutline VDSS -45V TSMT3 (3) RDS(on) (Max.) 190mW (1) ID -2.0A PD 1.0W (2) lFeatures lInner circuit 1) Low on - resistance. 2) Built-in G-S Protection Diode. (1) Gate (2) Source 3) Small Surface Mount Package (TSMT3). (3) Drain 4) Pb-free lead plating ; RoHS compliant *1 BODY DIODE *2 ESD PROTECTION DIODE lPackaging specifications Packaging Taping Reel size (mm) 180 lApplication Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TL Marking FB lAbsolute maximum ratings(Ta = 25 C) Parameter Symbol Value Unit VDSS Drain - Source voltage -45 V Continuous drain current ID *1 2.0 A Pulsed drain current ID,pulse *2 8.0 A VGSS Gate - Source voltage 20 V PD *3 1.0 W Power dissipation PD *4 0.54 W Tj Junction temperature 150 C Tstg Range of stora