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RQ6E030AT Datasheet Pch -30V -3.0A Middle Power MOSFET lOutline l TSMT6 VDSS -30V RDS(on)(Max.) 91m ID 3.0A PD 1.25W lInner circuit l lFeatures l 1) Low on - resistance. 2) Small Surface Mount Package (TSMT6). 3) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embossed Packing Tape Reel size (mm) 180 lApplication l Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCR Marking JS lAbsolute maximum ratings (Ta = 25 C) l Parameter Symbol Value Unit VDSS Drain - Source voltage -30 V ID Continuous drain current 3.0 A ID,pulse*2 Pulsed drain current 12 A VGSS Gate - Source voltage 20 V EAS*3 Avalanche energy, single pulse 3.3 mJ IAS*3 Avalanche current -3.0 A PD*4 Power di