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Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 400 Continuous Drain Current (TC=25 ) 5.5 ID A Continuous Drain Current (TC=100 ) 3.5 1 IDM Drain Current-Pulsed O 22 A VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy 346 mJ O IAR Avalanche Current 1 5.5 A O EAR Repetitive Avalanche Energy 1 7.3 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 4.0 O Total Power Dissipation (TC=25 ) 73 W PD Linear Derating Factor W/ 0.58 Operating Junct