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Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V Continuous Drain Current (TC=25 ) 6 ID A Continuous Drain Current (TC=100 ) 3.8 1 IDM Drain Current-Pulsed 24 O A _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 480 O mJ IAR Avalanche Current 1 6 A O EAR Repetitive Avalanche Energy 20 1 mJ O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O Total Power Dissipation (TC=25 ) 200 W PD Linear Derating Factor 1.59 W/ Operating Junction and - 55 to