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Ordering number EN3171 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1575/2SC4080 High-Frequency Amplifier, Wide-Band Amplifier Applications Features Package Dimensions High fT. unit mm High breakdown voltage. 2038 Small reverse transfer capacitance and excellent [2SA1575/2SC4080] high-frequency characteristic. Adoption of FBET process. E Emitter C Collector B Base ( ) 2SA1575 SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ( )200 V Collector-to-Emitter Voltage VCEO ( )200 V Emitter-to-Base Voltage VEBO ( )4 V Collector Current IC ( )100 mA Collector Current (Pulse) ICP ( )200 mA Collector Dissipation PC 500 mW Mounted on ceramic board (250mm2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg