Скачать даташит для 2sb817p_2sd1047p_2sd1047p:

Ordering number ENN6572 2SB817P / 2SD1047P 2SB817P PNP Epitaxial Planar Silicon Transistor 2SD1047P NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P / 2SD1047P] Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF 15.6 3.2 4.8 14.0 2.0 characteristic. 1.6 2.0 0.6 1.0 1 2 3 1 Base 0.6 2 Collector 3 Emitter Specifications 5.45 5.45 SANYO TO-3PB ( ) 2SB817P Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)160 V Collector-to-Emitter Voltage VCEO (-)140 V Emitter-to-Base Voltage VEBO (-)6 V Collect