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Ordering number EN3699A NPN Triple Diffused Planar Silicon Transistor 2SC4630 900V/100mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=900V). unit mm Small Cob (typical Cob=2.8pF). 2079B Full isolation package. [2SC4630] High reliability (Adoption of HVP process). 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO TO-220FI (LS) Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 900 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 100 mA Collector Current (Pulse) ICP 300 mA Collector Dissipation PC 2 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteri