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Ordering number ENN3699B 2SC4630LS NPN Triple Diffused Planar Silicon Transistor 2SC4630LS 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage(VCEO min=900V). unit mm Small Cob(typical Cob=2.8pF). 2079D Full isolation package. [2SC4630LS] High reliability(Adoption of HVP process). 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Base 2 Collector 3 Emitter Specifications 2.55 2.55 SANYO TO-220FI(LS) Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 900 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 100 mA Collector Current (Pulse) ICP 300 mA Collector Dissipation PC 2 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Ele