Скачать даташит для 2sc6089:

Ordering number ENA0995 2SC6089 SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection 2SC6089 Output Applications Features High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 700 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A 3.0 W Collector Dissipation PC Tc=25 C80 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V, IE=0A 10 A Collector Cutoff Current I