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Ordering number ENA0434 2SC6096 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6096 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 120 V Collector-to-Emitter Voltage VCES 120 V Collector-to-Emitter Voltage VCEO 100 V Emitter-to-Base Voltage VEBO 6.5 V Collector Current IC 2 A Collector Current (Pulse) ICP 3 A Base Current IB 400 mA Mounted on a ceramic board (250mm2 0.8mm) 1.3 W Collector Dissipation PC Tc=25 C 3.5 W Junction Temperature Tj 150