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Ordering number ENA0413 2SC6098 NPN Epitaxial Planar Silicon Transistor 2SC6098 High-Voltage Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 120 V Collector-to-Emitter Voltage VCES 120 V Collector-to-Emitter Voltage VCEO 80 V Emitter-to-Base Voltage VEBO 6.5 V Collector Current IC 2.5 A Collector Current (Pulse) ICP 4 A Base Current IB 500 mA 0.8 W Collector Dissipation PC Tc=25 C15 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics a