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Ordering number 1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit mm equipment. 2006A [2SB927/2SD1247] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. ( ) 2SB927 EIAJ SC-51 B Base SANYO MP C Collector Specifications E Emitter Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ( )30 V Collector-to-Emitter Voltage VCEO ( )25 V Emitter-to-Base Voltage VEBO ( )6 V Collector Current IC ( )2.5 A Collector Current (Pulse) ICP ( )5 A Collector Dissipation PC 1.0 W C Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta