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SSD04N65 4A , 650V , RDS(ON) 2.6 N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . A FEATURES C B D Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline G E 100% EAS Guaranteed Green Device Available K H F N O P M J MARKING Drain Millimeter Millimeter REF. REF. 4N65 Min. Max. Min. Max. A 6.35 6.80 J 2.30 REF. Date Code B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 Gate D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43