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2SA1587 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1587 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent h linearity h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC4117 Small package Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Base current IB -20 mA JEDEC Collector power dissipation PC 100 mW JEITA SC-70 Junction temperature Tj 125 C TOSHIBA 2-2E1A Storage temperature range Tstg -55 125 C Weight 0.006 g (typ.) Electrical Characteristics (Ta = = 25 C) = = Characteristics Symbol Tes