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2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1588 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC4118 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA Base current IB -50 mA JEDEC Collector power dissipation PC 100 mW JEITA SC-70 Junction temperature Tj 125 C TOSHIBA 2-2E1A Storage temperature range Tstg -55 125 C Weight 0.006 g (typ.) Electrical Characteristics (Ta = = 25 C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -35 V, IE = 0