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2SC4315 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 14dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector current IC 80 mA Base current IB 40 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C Storage temperature range Tstg -55 125 C JEDEC JEITA TOSHIBA 2-3J1C Weight 0.012 g (typ.) Microwave Characteristics (Ta = = 25 C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 GHz S21e 2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz 19.5 Insertion gain dB S21e 2 (2