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2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3471 Switching Regulator and DC-DC Converter Applications Unit mm Low drain-source ON resistance RDS (ON) = 10 (typ.) High forward transfer admittance Yfs = 0.4 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 k ) VDGR 500 V Gate-source voltage VGSS 30 V DC (Note 1) ID 0.5 Drain current A Pulse (Note 1) IDP 1.5 Drain power dissipation PD 0.5 W Drain power dissipation (Note 2) PD 1.5 W JEDEC Single pulse avalanche energy EAS 14.3 mJ (Note 3) JEITA SC-62 Avalanche current IAR 0.5 A TOSHIBA 2-5K1B Repetitive avalanche energy (Note