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2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 12 m (typ.) High forward transfer admittance Yfs = 33 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 40 V) Enhancement mode Vth = 1.5 2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDSS 40 V Drain gate voltage (RGS = 20 k ) VDGR 40 V Gate source voltage VGSS 20 V DC (Note 1) ID 26 A Drain current Pulse (Note 1) IDP 78 A Drain power dissipation (Tc = 25 C) PD 25 W JEDEC Single-pulse avalanche energy EAS 63 mJ (Note 2) JEITA SC-67 Avalanche current IAR 26 A TOSHIBA 2-10R1B Repetitive avalanche energy (Note 3) EAR 2.5 mJ Weight 1.9 g (