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2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3903 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.32 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 k ) VDGR 600 V Gate-source voltage VGSS 30 V DC (Note 1) ID 14 1. GATE Drain current A 2. DRAIN (HEATSINK) Pulse (Note 1) IDP 56 3. SOURCE Drain power dissipation (Tc = 25 C) PD 150 W Single pulse avalanche energy JEDEC EAS 806 mJ (Note 2) JEITA SC-65 Avalanche current IAR 14 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note

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 2sk3903.pdf Проектирование, MOSFET, Мощность

 2sk3903.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sk3903.pdf База данных, Инновации, ИМС, Транзисторы