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P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 90m @VGS = 10V 25V 12A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 12 ID Continuous Drain Current TC= 100 C 8 A IDM 45 Pulsed Drain Current1 EAS Avalanche Energy L=0.1mH 60 mJ TC= 25 C 48 PD Power Dissipation W TC= 100 C 20 Tj, Tstg Operating Junction & Storage Temperature Range -55 to 150 C TL 275 Lead Temperature (1/16 from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 3 Junction-to-Ambient RqJA 75 C / W Case-to-Heatsink RqCS 1 1 Pulse width limited by maximum junction temperature. REV 1.0 1 2014/5/19 P3055LDG N-Channel Logic Level Enhancement M