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P3055LLG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 72m @VGS = 10V 6A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TA = 25 C 6 ID Continuous Drain Current TA = 70 C 3.3 A IDM 21 Pulsed Drain Current2 IAS Avalanche Current 12 Avalanche Energy EAS L = 0.1mH 7.5 mJ TA = 25 C 3 PD Power Dissipation W TA = 70 C 1.1 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJc 12 C / W Junction-to-Ambient RqJA 42 1 Pulse width limited by maximum junction temperature. 2 Limited by package. Ver 1.0 1 2012/4/12 P3055LLG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25