Скачать даташит для 2sd1609:

UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier 1 TO-126 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C, unless otherwise specified) PARAMETER SYMBOL MIN MAX UNIT Collector-Base Voltage BVCBO 160 V Collector-Emitter Voltage BVCEO 160 V Emitter-Base Voltage BVEBO 5 V Collector Current Ic 100 mA Total Power Dissipation (T =25 C) Ptot 1.25 W a Junction Temperature Tj 150 C Storage Temperature Tstg -50 150 C ELECTRICAL CHARACTERISTICS (Ta=25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Voltage BVCBO I =10 A 160 V C Collector-Emitter Voltage BVCEO I =1mA 160 V C Emitter-Base Voltage BVEBO I =10 A 5 V E Collector Cut-off Current ICBO VCB=140V 10 A DC Current Gain hFE1 VCE=5V, Ic=10mA 60 320 hFE2