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Si1301DL New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 3.8 @ VGS = 4.5 V 180 20 20 5.0 @ VGS = 2.5 V 100 SOT-323 SC-70 (3-Leads) Marking Code G 1 LG XX Lot Traceability 3 D and Date Code Part # Code S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VGS "8 TA = 25_C 180 Continuous Drain Current (TJ = 150_C)a ID Continuous Drain Current (TJ = 150 C)a ID mA A TA = 70_C 140 Pulsed Drain Current IDM 500 TA = 25_C 0.15 Maximum Power Dissipationa PD W Maximum Power Dissipationa PD W TA = 70_C 0.10 Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 833 _C/W Notes