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Si1304BDL Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.270 at VGS = 4.5 V 0.90 TrenchFET Power MOSFET 30 1.1 100 % Rg Tested 0.385 at VGS = 2.5 V 0.75 Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) G 1 D Marking Code 3 D KF XX Lot Traceability and Date Code S 2 G Part # Code Top View S Ordering Information Si1304BDL-T1-E3 (Lead (Pb)-free) Si1304BDL-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 TC = 25 C 0.90 TC = 70 C 0.71 Continuous Drain Current (TJ = 150 C) ID TA = 25 C 0.85b, c TA = 70 C 0.68b, c A Pulsed Drain Current IDM