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New Product Si1308EDL Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)c Qg (Typ.) 100 % Rg Tested 0.132 at VGS = 10 V 1.5 Typical ESD Performance 1800 V 30 0.144 at VGS = 4.5 V 1.4 1.4 nC Material categorization For definitions of compliance please see 0.185 at VGS = 2.5 V 1.3 www.vishay.com/doc?99912 APPLICATIONS SOT-323 SC-70 (3-LEADS) Smart Phones, Tablet PC s - DC/DC Converters G 1 - Boost Converters - Load Switch, OVP Switch 3 D D S 2 G Top View Si1308EDL (KG)* * Marking Code S Ordering Information N-Channel MOSFET Si1308EDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 12 TC = 25 C 1.4