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Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b 0.130 @ VGS = 4.5 V 2.0 20 0.190 @ VGS = 2.5 V 1.6 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS "8 TA= 25_C 2.0 1.75 Continuous Drain Current (TJ = 150_C)b ID _ TA= 70_C 1.6 1.4 A Pulsed Drain Currenta IDM 10 Continuous Source Current (Diode Conduction)b IS 0.75 0.6 TA= 25_C 0.9 0.7 Power Dissipationb PD W TA= 70_C 0.57 0.45 Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb 115 140 RthJA _C/W _ Maximum Junction