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2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead(Pb)-Free 4 1 2 3 Features * Low On-Resistance SOT-363(SC-88) * Fast Switching Speed * Low-voltage drive 6 5 4 * Easily designed drive circuits D2 G1 S1 * ESD Protected 2000V Mechanical Data *Case SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 S2 G2 D1 *Terminals Solderable per MIL-STD-202, Method 208 1 2 3 *Weight 0.006 grams(approx.) Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain Current ID 115 Continuous mA *1 Pulsed IDP 800 Reverse Drain Current ID 115 Continuous mA *1 Pulsed IDRP 800 Power Dissipation (TA=25 C) PD 225 mW Operating Junction and Storage TJ,Tstg -55 to 150 C Temperature Range Device Marking 2N7002KDW=RK Note *2 When mounted on a 1*0.75*0.062 inch g