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PD 91471BIRG4PC50UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.65V Generation 4 IGBT design provides tighterG parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27AE IGBT co-packaged with HEXFREDTM ultrafast,n-channel ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC packageBenefits Generation 4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics requireless/no snubbing

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 irg4pc50ud.pdf Проектирование, MOSFET, Мощность

 irg4pc50ud.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irg4pc50ud.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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