Справочник транзисторов. 2SB507

 

Биполярный транзистор 2SB507 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB507
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 30 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Ёмкость коллекторного перехода (Cc): 130 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO220

 Аналоги (замена) для 2SB507

 

 

2SB507 Datasheet (PDF)

 ..1. Size:112K  mospec
2sb507.pdf

2SB507
2SB507

AAA

 ..2. Size:158K  jmnic
2sb507.pdf

2SB507
2SB507

JMnic Product Specification Silicon PNP Power Transistors 2SB507 DESCRIPTION With TO-220C package Complement to type 2SD313 Low collector saturation voltage APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

 ..3. Size:236K  lge
2sb507.pdf

2SB507
2SB507

2SB507(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A DC Current Gain hFE=40~320@IC=-1A Complementray to NPN 2SD313 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base V

 ..4. Size:221K  inchange semiconductor
2sb507.pdf

2SB507
2SB507

isc Silicon PNP Power Transistor 2SB507DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -2.0ACE(sat) CComplement to Type 2SD313Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the output stage of 15W to 25W AF poweramplif

 9.1. Size:56K  toshiba
2sb502a 2sb503a.pdf

2SB507

 9.2. Size:42K  sanyo
2sb508.pdf

2SB507

 9.3. Size:25K  no
2sb509.pdf

2SB507

 9.4. Size:161K  jmnic
2sb509.pdf

2SB507
2SB507

JMnic Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE

 9.5. Size:215K  inchange semiconductor
2sb503.pdf

2SB507
2SB507

isc Silicon PNP Power Transistors 2SB503DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier and regulatorapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 9.6. Size:193K  inchange semiconductor
2sb508.pdf

2SB507
2SB507

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB508DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -2.0ACE(sat) CComplement to Type 2SD314Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the output stage of 15W

 9.7. Size:215K  inchange semiconductor
2sb502.pdf

2SB507
2SB507

isc Silicon PNP Power Transistors 2SB502DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier and regulatorapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 9.8. Size:129K  inchange semiconductor
2sb509.pdf

2SB507
2SB507

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

 9.9. Size:179K  inchange semiconductor
2sb506.pdf

2SB507
2SB507

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB506DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifi

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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