2SB521-2 - параметры, поиск аналогов, даташиты транзистора

2SB521-2 Datasheet (PDF)

8.1. Size:183K inchange semiconductor
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB521DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.4V(Max.) @I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATI

9.1. Size:167K inchange semiconductor
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB522DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.4V(Max.) @I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATI

9.2. Size:217K inchange semiconductor
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isc Silicon PNP Power Transistor 2SB526DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD356Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power dirver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

9.3. Size:178K inchange semiconductor
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB520DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -140V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -7ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

Другие транзисторы... 2SB519-1 , 2SB519-2 , 2SB52 , 2SB520 , 2SB520-1 , 2SB520-2 , 2SB521 , 2SB521-1 , 2SC2383Y , 2SB522 , 2SB522-1 , 2SB522-2 , 2SB523 , 2SB524 , 2SB525 , 2SB526 , 2SB527 .