2SB544D. Аналоги и основные параметры
Наименование производителя: 2SB544D
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.9 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 90 MHz
Ёмкость коллекторного перехода (Cc): 50 pf
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO92
Аналоги (замена) для 2SB544D
- подборⓘ биполярного транзистора по параметрам
2SB544D даташит
9.1. Size:134K nec
2sb548 2sb549 2sd414 2sd415.pdf 
DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT mm) Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount spaces due to small and thin package Easy to be attached to radiators ABSOLUTE MAXIMUM RATINGS (Ta = 25
9.4. Size:159K jmnic
2sb548.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB548 DESCRIPTION With TO-126 package Complement to type 2SD414 APPLICATIONS Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE
9.5. Size:251K jmnic
2sb546a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB546A DESCRIPTION With TO-220C package Complement to type 2SD401A Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simpli
9.6. Size:199K jmnic
2sb546.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB546 DESCRIPTION With TO-220C package Complement to type 2SD401 Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplifi
9.7. Size:181K inchange semiconductor
2sb548.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB548 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO With TO-126 package Complement to Type 2SD414 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.8. Size:220K inchange semiconductor
2sb546a.pdf 
isc Silicon PNP Power Transistor 2SB546A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SD401A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical deflection of complement
9.9. Size:185K inchange semiconductor
2sb547.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB547 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SD402 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical def
9.10. Size:213K inchange semiconductor
2sb541.pdf 
isc Silicon PNP Power Transistors 2SB541 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. Suitable for output sta
9.11. Size:185K inchange semiconductor
2sb549.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB549 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO With TO-126 package Complement to Type 2SD415 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.12. Size:215K inchange semiconductor
2sb546.pdf 
isc Silicon PNP Power Transistor 2SB546 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SD401 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical deflection of complementar
Другие транзисторы: 2SB539A, 2SB539B, 2SB539C, 2SB54, 2SB540, 2SB541, 2SB542, 2SB544, BC547, 2SB544E, 2SB544F, 2SB544G, 2SB546, 2SB546A, 2SB547, 2SB547A, 2SB548
