Биполярный транзистор 2SB544F - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB544F
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.9 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 90 MHz
Ёмкость коллекторного перехода (Cc): 50 pf
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: TO92
2SB544F Datasheet (PDF)
2sb548 2sb549 2sd414 2sd415.pdf
DATA SHEETSILICON POWER TRANSISTOR2SB548, 549/2SD414, 415PNP/NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount spaces due to small and thin package Easy to be attached to radiatorsABSOLUTE MAXIMUM RATINGS (Ta = 25
2sb548.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB548 DESCRIPTION With TO-126 package Complement to type 2SD414 APPLICATIONS Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE
2sb546a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB546A DESCRIPTION With TO-220C package Complement to type 2SD401A Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simpli
2sb546.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB546 DESCRIPTION With TO-220C package Complement to type 2SD401 Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplifi
2sb548.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB548DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOWith TO-126 packageComplement to Type 2SD414Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sb546a.pdf
isc Silicon PNP Power Transistor 2SB546ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SD401AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical deflectionof complement
2sb547.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB547DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SD402Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical def
2sb541.pdf
isc Silicon PNP Power Transistors 2SB541DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD388Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.Suitable for output sta
2sb549.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB549DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOWith TO-126 packageComplement to Type 2SD415Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sb546.pdf
isc Silicon PNP Power Transistor 2SB546DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SD401Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical deflectionof complementar
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050