2SB55. Аналоги и основные параметры
Наименование производителя: 2SB55
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 75 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.5 MHz
Ёмкость коллекторного перехода (Cc): 70 pf
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: TO1
Аналоги (замена) для 2SB55
- подборⓘ биполярного транзистора по параметрам
2SB55 даташит
0.2. Size:149K jmnic
2sb555.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION With TO-3 package Complement to type 2SD425/426 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3)
0.3. Size:144K jmnic
2sb554.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB554 DESCRIPTION With TO-3 package Complement to type 2SD424 High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITION
0.4. Size:153K jmnic
2sb557.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB557 DESCRIPTION With TO-3 package Complement to type 2SD427 High power dissipation APPLICATIONS Power amplifier applications Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Col
0.5. Size:207K jmnic
2sb553.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB553 DESCRIPTION With TO-220C package Complement to type 2SD553 Low collector saturation voltage APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3
0.6. Size:144K jmnic
2sb552.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB552 DESCRIPTION With TO-3 package Complement to type 2SD552 APPLICATIONS Power amplifier applications Power switching applications DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PAR
0.7. Size:212K inchange semiconductor
2sb555.pdf 
isc Silicon PNP Power Transistors 2SB555 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Complement to Type 2SD425 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 80W high-fidelity audio
0.8. Size:116K inchange semiconductor
2sb555 2sb556.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION With TO-3 package Complement to type 2SD425/426 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi
0.9. Size:212K inchange semiconductor
2sb556.pdf 
isc Silicon PNP Power Transistors 2SB556 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD426 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 80W high-fidelity audio
0.10. Size:214K inchange semiconductor
2sb554.pdf 
isc Silicon PNP Power Transistor 2SB554 DESCRIPTION High Power Dissipation- P = 150W@T = 25 C C High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Complement to Type 2SD424 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier ,DC-DC converter and regulator applications. ABSOLUTE M
0.11. Size:215K inchange semiconductor
2sb557.pdf 
isc Silicon PNP Power Transistors 2SB557 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Power Dissipation- P = 80W(Max)@T =25 C C Complement to Type 2SD427 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 50W high-fidelity audio
0.12. Size:218K inchange semiconductor
2sb553.pdf 
isc Silicon PNP Power Transistor 2SB553 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -4A CE(sat) C Complement to Type 2SD553 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
0.13. Size:181K inchange semiconductor
2sb550.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB550 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -70V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max.)@I = -5A CE(sat) C With TO-66 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and swit
0.14. Size:215K inchange semiconductor
2sb558.pdf 
isc Silicon PNP Power Transistors 2SB558 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation- P = 60W(Max)@T =25 C C Complement to Type 2SD428 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 40W high-fidelity audio
0.15. Size:212K inchange semiconductor
2sb552.pdf 
isc Silicon PNP Power Transistors 2SB552 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO High Power Dissipation- P = 150W(Max)@T =25 C C Complement to Type 2SD552 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. High power switching applications. DC-DC con
0.16. Size:213K inchange semiconductor
2sb551.pdf 
isc Silicon PNP Power Transistors 2SB551 DESCRIPTION Low Collector Saturation Voltage- V = -1.2V(Typ.)@I = -2A CE(sat) C High Power Dissipation- P = 25W(Max)@T =55 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
Другие транзисторы: 2SB544F, 2SB544G, 2SB546, 2SB546A, 2SB547, 2SB547A, 2SB548, 2SB549, 2N3055, 2SB550, 2SB551, 2SB551H, 2SB552, 2SB553, 2SB553O, 2SB553Y, 2SB554
