Биполярный транзистор 2SB554 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB554
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Ёмкость коллекторного перехода (Cc): 900 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO3
2SB554 Datasheet (PDF)
2sb554.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB554 DESCRIPTION With TO-3 package Complement to type 2SD424 High power dissipation APPLICATIONS For use in power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION
2sb554.pdf
isc Silicon PNP Power Transistor 2SB554DESCRIPTIONHigh Power Dissipation-: P = 150W@T = 25C CHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOComplement to Type 2SD424Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier ,DC-DC converter and regulatorapplications.ABSOLUTE M
2sb555.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION With TO-3 package Complement to type 2SD425/426 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3)
2sb557.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB557 DESCRIPTION With TO-3 package Complement to type 2SD427 High power dissipation APPLICATIONS Power amplifier applications Recommended for 50W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 Col
2sb553.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB553 DESCRIPTION With TO-220C package Complement to type 2SD553 Low collector saturation voltage APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3
2sb552.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB552 DESCRIPTION With TO-3 package Complement to type 2SD552 APPLICATIONS Power amplifier applications Power switching applications DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PAR
2sb555.pdf
isc Silicon PNP Power Transistors 2SB555DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CComplement to Type 2SD425Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 80W high-fidelity audio
2sb555 2sb556.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB555 2SB556 DESCRIPTION With TO-3 package Complement to type 2SD425/426 High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi
2sb556.pdf
isc Silicon PNP Power Transistors 2SB556DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD426Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 80W high-fidelity audio
2sb557.pdf
isc Silicon PNP Power Transistors 2SB557DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Power Dissipation-: P = 80W(Max)@T =25C CComplement to Type 2SD427Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 50W high-fidelity audio
2sb553.pdf
isc Silicon PNP Power Transistor 2SB553DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -4ACE(sat) CComplement to Type 2SD553Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sb550.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB550DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -70V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max.)@I = -5ACE(sat) CWith TO-66 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers andswit
2sb558.pdf
isc Silicon PNP Power Transistors 2SB558DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CComplement to Type 2SD428Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 40W high-fidelity audio
2sb552.pdf
isc Silicon PNP Power Transistors 2SB552DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CComplement to Type 2SD552Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.High power switching applications.DC-DC con
2sb551.pdf
isc Silicon PNP Power Transistors 2SB551DESCRIPTIONLow Collector Saturation Voltage-: V = -1.2V(Typ.)@I = -2ACE(sat) CHigh Power Dissipation-: P = 25W(Max)@T =55C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050