2SB596O - параметры, поиск аналогов, даташиты транзистора

2SB596O Datasheet (PDF)

8.1. Size:69K wingshing
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2SB596 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD526ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25 PC 30 W Junc

8.2. Size:235K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SB596 DESCRIPTION With TO-220C package Complement to type 2SD526 Good linearity of hFE APPLICATIONS Power amplifier applications Recommend for 2025W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute

8.3. Size:527K semtech
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ST 2SB596 PNP Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit80 VCollector Base Voltage -VCBO 80 VCollector Emitter Voltage -VCEO 5 VEmitter Base Voltage -VEBO 4 ACollector Current -IC 0.4 ABase Current -IB OPower Dissipation (Tc = 25 C) PC 30 WOJu

8.4. Size:219K inchange semiconductor
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isc Silicon PNP Power Transistor 2SB596DESCRIPTIONLow Collector Saturation Voltage:V = -1.7(V)(Max)@I = -3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOComplement to Type 2SD526Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Recommended for 20~25W high-fidelity a

Другие транзисторы... 2SB588 , 2SB589 , 2SB59 , 2SB595 , 2SB595O , 2SB595R , 2SB595Y , 2SB596 , BC549 , 2SB596R , 2SB596Y , 2SB598 , 2SB598D , 2SB598E , 2SB598F , 2SB598G , 2SB598NP .