Transistor2SB621, 2SB621ASilicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD592 and 2SD592A5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SB621 30VCBO V+0.2 +0.2base voltage 2S

Transistor2SB621, 2SB621ASilicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD592 and 2SD592A5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).High transition frequency fT.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SB621 30VCBO V+0.2 +0.2base voltage 2S

2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High DC Current Gain. hFE200 (Typ.) (VCE= -1V, IC= -100mA) A Complimentary to 2SD596 L33Top View C BMARKING 11 2Product-Rank 2SB624-BV1 2SB624-BV2 2SB624-BV3 2K ERan

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB624 TRANSISTOR (PNP)FEATURES1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA)2.EMITTER3.COLLECTOR Complimentary to 2SD596.MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Volt

2SB624 TRANSISTOR(PNP) SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -700

2SB624 SOT-23-3L Transistor(PNP)1.BASE SOT-23-3L2.EMITTER 2.923.COLLECTOR 0.351.17Features2.80 1.60High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. 0.151.90Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emi

2SB624 SOT-23 Transistor(PNP)SOT-231.BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters)VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5

SMD Type TransistorsPNP Transistors2SB624SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30

2SB624 TRANSI STOR (PNP)2SB624Equivalent Circuit: SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to 2SD596 High DC Current gainMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -30 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEBO -5 VCollector Current IC -700 mACollector Power Diss

INCHANGE Semiconductorisc Silicon PNP Transistor 2SB624DESCRIPTIONSOT-23 plastic-encapsulate transistorsHigh DC current gain:h =200(TYP)FE@V = -1V, I = -100mACE CComplementary to 2SD596Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency general purpose amplifierABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB626DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -6ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB625DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

isc Silicon PNP Power Transistor 2SB628DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOComplement to Type 2SD608Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL