2SB63. Аналоги и основные параметры
Наименование производителя: 2SB63
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 75 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.1 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO3
Аналоги (замена) для 2SB63
- подборⓘ биполярного транзистора по параметрам
2SB63 даташит
0.1. Size:27K sanyo
2sb633p 2sd613p.pdf 
Ordering number ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, unit mm high current 6A. 2010C AF 35 to 45W output. [2SB633P / 2SD613P] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 2 Collector 1 2 3 3 Emitter Spec
0.3. Size:220K jmnic
2sb631 2sb631k.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to
0.4. Size:211K jmnic
2sb632 2sb632k.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute max
0.5. Size:199K jmnic
2sb633.pdf 
JMnic Silicon PNP Power Transistors 2SB633 DESCRIPTION With TO-220C package Complement to type 2SD613 High breakdown voltage VCEO=-85V High current IC=-6A APPLICATIONS Recommend for 25-35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=2
0.6. Size:358K lzg
2sb631k 3ca631k.pdf 
2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR Purpose Low frequency power amplifier,medium speed switching applications . , 2SD600K(3DA600K) Features High V ,high current,low saturation voltage and good linearity of h compleme
0.7. Size:200K inchange semiconductor
2sb631.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB631 DESCRIPTION High Collector Current-I =-1.0A C High Collector-Emitter Breakdown Voltage- V =-100V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD600 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applicati
0.8. Size:178K inchange semiconductor
2sb631 2sb631k.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collecto
0.9. Size:178K inchange semiconductor
2sb631-k.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collecto
0.10. Size:213K inchange semiconductor
2sb631k.pdf 
isc Silicon PNP Power Transistor 2SB631K DESCRIPTION High Collector Current-I =-1.0A C High Collector-Emitter Breakdown Voltage- V =-120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD600K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM
0.11. Size:219K inchange semiconductor
2sb630.pdf 
isc Silicon PNP Power Transistor 2SB630 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Complement to Type 2SD610 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications. Suitable for driver of 200 300 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
0.12. Size:212K inchange semiconductor
2sb634.pdf 
isc Silicon PNP Power Transistor 2SB634 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt
0.13. Size:171K inchange semiconductor
2sb632-k.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 B
0.14. Size:218K inchange semiconductor
2sb633.pdf 
isc Silicon PNP Power Transistor 2SB633 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -85V(Min) (BR)CEO Complement to Type 2SD613 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency 25 35 watts output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -1
0.15. Size:188K inchange semiconductor
2sb632.pdf 
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB632 DESCRIPTION High Collector Current-I =-2.0A C High Collector-Emitter Breakdown Voltage- V =-25V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD612 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency power amplifier applications ABSOLUTE
0.16. Size:184K inchange semiconductor
2sb638.pdf 
INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB638 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h =1000 (Min) @ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier a
Другие транзисторы: 2SB624BV4, 2SB624BV5, 2SB624R, 2SB625, 2SB626, 2SB627, 2SB628, 2SB628A, BC327, 2SB630, 2SB631, 2SB631D, 2SB631E, 2SB631F, 2SB631K, 2SB631KD, 2SB631KE
