2SB646 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SB646 Даташит. Аналоги

   Наименование производителя: 2SB646
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.9 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 70 MHz
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: TO92

Аналог (замена) для 2SB646

- подбор ⓘ биполярного транзистора по параметрам

2SB646 Datasheet (PDF)

..1. Size:344K hitachi
2sb646.pdf pdf_icon

9.1. Size:430K 1
2sb641 2sb642.pdf pdf_icon

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten

9.2. Size:284K mcc
2sb647l-c.pdf pdf_icon

MCCTM Micro Commercial Components20736 Marilla Street Chatsworth2SB647LMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1Transistor Lead Free Finish/Rohs Complian

9.3. Size:719K mcc
2sb647-b.pdf pdf_icon

2SB647(A)-BMCCMicro Commercial ComponentsTM2SB647(A)-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB647-DPhone: (818) 701-4933Fax: (818) 701-4939Features Epoxy meets UL 94 V-0 flammability ratingPNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation.Plastic-Encapsulate Collector-current -1.0A

9.4. Size:284K mcc
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9.5. Size:719K mcc
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9.6. Size:284K mcc
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9.7. Size:719K mcc
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9.8. Size:39K panasonic
2sb643 2sb644.pdf pdf_icon

Transistor2SB643, 2SB644Silicon PNP epitaxial planer typeFor low-power general amplificationUnit: mmComplementary to 2SD638 and 2SD6396.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.Absolute Maximum Ratings (Ta=25C)0.85Parameter Symbol Ratings Unit

9.9. Size:54K panasonic
2sb642 e.pdf pdf_icon

Transistor2SB642Silicon PNP epitaxial planer typeFor low-power general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High foward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C)0.55 0.1 0.45 0.05Parameter

9.10. Size:50K panasonic
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9.11. Size:44K panasonic
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9.12. Size:167K utc
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UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL APPLICATION * Low frequency power amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB647L-x-T9N-B 2SB647G-x-T9N-B TO-92NL E C B Tape Box 2SB647L-x-T9N-K 2SB647G-x-T9N-K TO-92NL E C B Bulk www.unisonic.com.tw 1 of 4

9.13. Size:293K utc
2sb649 2sb649a.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 11SOT-223 SOT-89 APPLICATIONS 1* Low frequency power amplifier complementary pair with UTC 12SD669/A TO-252 TO-9211TO-126TO-92NL11TO-126STO-126C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

9.14. Size:35K hitachi
2sb649a.pdf pdf_icon

2SB649, 2SB649ASilicon PNP EpitaxialApplicationLow frequency power amplifier complementary pair with 2SD669/AOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SB649, 2SB649AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SB649 2SB649A UnitCollector to base voltage VCBO 180 180 VCollector to emitter voltage VCEO 120 160 VEmitter to base v

9.15. Size:33K hitachi
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2SB647, 2SB647ASilicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD667/AOutlineTO-92MOD1. Emitter2. Collector3. Base3212SB647, 2SB647AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SB647 2SB647A UnitCollector to base voltage VCBO 120 120 VCollector to emitter voltage VCEO 80 100 VEmitter to base volt

9.16. Size:253K secos
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2SB649/2SB649A PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-126C3.20.28.00.2FEATURES 2.00.24.140.1O2.80.1 O3.20.1 Power smplifier applications11.00.21.40.11 2 3 Power dissipation PCM : 1 W Tamb=25 1.270.1 Collector current 15.3

9.17. Size:495K jiangsu
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate TransistorsTO 92L 2SB647 TRANSISTOR (PNP)1. EMITTER2. COLLECTORFEATURES Low Frequency Power Amplifier3. BASE Complementary Pair with 2SD667 Equivalent Circuit B647=Device code B647Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING

9.18. Size:280K jiangsu
2sb649 2sb649a.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage -180 V VCEO Collector-Emit

9.19. Size:5305K jiangsu
2sb647 2sb647a.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors J C T TO 92M TO 92MOD 2SB647/2SB647A TRANSISTOR (PNP) 1. COLLECTOR 1. EMITTER 2. BASE FEATURES 2. COLLECTOR Low Frequency Power Amplifier 3. EMITTER Complementary Pair with 2SD667/A 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Va

9.20. Size:199K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO:-120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected t

9.21. Size:153K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SB645 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITV

9.22. Size:201K lge
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2SB649/2SB649A(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.5007.4002.9001.100Symbol Parameter Value Units7.8001.500VCBO Collector-Base Voltage -180 V 3.9003.0004.100VCEO Collector-Emitter Voltage 3

9.23. Size:194K lge
2sb649-2sb649a to-126c.pdf pdf_icon

2SB649/2SB649A TO-126C Transistor (PNP)TO-126C1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -180 V 3.0007.8003.4008.200 1.800VCEO Collector-Emitter Voltage 2.2004.0402SB649 -120 V

9.24. Size:186K wietron
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2SB647 / 2SB647APNP General Purpose Transistors2P b Lead(Pb)-Free13231.EMITTER3.BASE2.COLLECTOR1TO-92MODMAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter Voltage80VCEOVVCBOCollector-Base Voltage 120 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 1000 mATotal Device DissipationPD900 mWTA=25CTj CJunc

9.25. Size:273K wietron
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2SB649/2SB649APNP Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126CABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol 2SB649 2SB649A UnitVCBO-180 VCollector-Emitter VoltageVCEO-120 -160 VCollector-Base VoltageVEBOEmitter-Base Voltage 6.0 VCollector Current IC-1.5 APD1.0 WPower DisspationTj+150 CJunction Temp

9.26. Size:873K blue-rocket-elect
2sb649ta.pdf pdf_icon

2SB649TA(BR3CA649TA) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 2SD669TA(BR3DA669TA)Complementary pair with 2SD669TA(BR3DA669TA). / Applications Low frequency power amplifier. / Equivalen

9.27. Size:900K blue-rocket-elect
2sb649ad.pdf pdf_icon

2SB649AD Rev.A May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features 2SD669AD Complementary pair with 2SD669AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni

9.28. Size:1004K blue-rocket-elect
2sb649 2sb649a.pdf pdf_icon

2SB649(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features 2SD669(A)Complementary pair with 2SD669(A). / Applications Low frequency power amplifier. / Equivalent Circuit / Pin

9.29. Size:897K blue-rocket-elect
2sb647 2sb647a.pdf pdf_icon

2SB647(A) Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features 2SD667(A)Complementary pair with 2SD667(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P

9.30. Size:162K nell
2sb649am.pdf pdf_icon

RoHS RoHS 2SB649AM SeriesSEMICONDUCTORNell High Power ProductsBipolar General Purpose PNP Power Transistor-1.5A / -120V, -160V / 20W2.7 0.48.00.5+0.153.1- 0.11.1(B)32(C)(E)1TO-1260.82.290.5 2.290.5 0.55 1.2 APPLICATIONSCLow frequency power amplifier complementaryE C B Bpair with 2SD669AM/2SD669AM-APNPEAll dimensions in millimeter

9.31. Size:162K nell
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9.32. Size:244K lzg
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2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR :, 2SD667(3DG667)/2SD667A(3DG667A) Purpose: Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO-120 V 2SB647 -80

9.33. Size:244K lzg
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9.34. Size:380K lzg
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2SB649(3CA649) 2SB649A(3CA649A) PNP /SILICON PNP TRANSISTOR :/Purpose: Low frequency power amplifier. : 2SD669(3DA669)/2SD669A(3DA669A) Features: Complementary pair with 2SD669(3DA669)/2SD669A(3DA669A). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -180 V CBO

9.35. Size:152K haolin elec
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SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTDSOT-89 Plastic-Encapsulate Transistors 2SB647 TRANSISTOR (PNP) SOT-89-3L FEATURE Power dissipation 1. BASE PCM: 0.9 W (Tamb=25) 2. COLLECTOR 1 Collector current 2 ICM: -1 A 3. EMITTER 3 Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELE

9.36. Size:81K inchange semiconductor
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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB649A DESCRIPTION High Collector Current-IC=-1.5A High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-160V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD669A APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME

9.37. Size:212K inchange semiconductor
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isc Silicon PNP Power Transistors 2SB645DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CComplement to Type 2SD665Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 200W high-fidelity audi

9.38. Size:212K inchange semiconductor
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isc Silicon PNP Power Transistor 2SB649DESCRIPTIONHigh Collector Current-I =-1.5ACHigh Collector-Emitter Breakdown Voltage-: V =-120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD669Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RA

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