Биполярный транзистор 2SB750B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB750B
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 160 °C
Статический коэффициент передачи тока (hfe): 5000
Корпус транзистора: TO220
2SB750B Datasheet (PDF)
2sb755.pdf
4.3 MAXI : 300 I I-10I I loo-810-45I-3 I-201 I I -0.03 -0.1 -0.3 -1 -3 -10 -30-2I -8-625 75 100 125 175 200
2sb757.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB757 DESCRIPTION With TO-3PN package High collector current Wide area of safe operation Complement to type 2SD847 APPLICATIONS Audio amplifications Serie regulators General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli
2sb755.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB755 DESCRIPTION With MT-200 package Complement to type 2SD845 High transition frequency High breakdown voltage :VCEO=-150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and sy
2sb753.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB753 DESCRIPTION With TO-220C package Complement to type 2SD843 Low collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl
2sb754.pdf
Product Specification www.jmnic.comSilicon PNP Power Transistors 2SB754 DESCRIPTION With TO-3P(I) package Complement to type 2SD844 High collector current :I =-7A CLow collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected
2sb757.pdf
isc Silicon PNP Power Transistor 2SB757DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD847Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifier applicationsSeries regulatorsGeneral
2sb755.pdf
isc Silicon PNP Power Transistor 2SB755DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD845Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle
2sb753.pdf
isc Silicon PNP Power Transistor 2SB753DESCRIPTIONHigh Collector Current:I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -4ACE(sat) CHigh Collector Power DissipationComplement to Type 2SD843Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsPower amplifier applicatio
2sb754.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB754DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOHigh Collector Current: I = -7ACLow Collector Saturation Voltage-: V = -0.4V(Max) @I = -4ACE(sat) CComplement to Type 2SD844Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh cur
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050