Биполярный транзистор 2SB754 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB754
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 5 MHz
Ёмкость коллекторного перехода (Cc): 300 pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO218
2SB754 Datasheet (PDF)
2sb754.pdf
Product Specification www.jmnic.comSilicon PNP Power Transistors 2SB754 DESCRIPTION With TO-3P(I) package Complement to type 2SD844 High collector current :I =-7A CLow collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected
2sb754.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB754DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOHigh Collector Current: I = -7ACLow Collector Saturation Voltage-: V = -0.4V(Max) @I = -4ACE(sat) CComplement to Type 2SD844Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh cur
2sb755.pdf
4.3 MAXI : 300 I I-10I I loo-810-45I-3 I-201 I I -0.03 -0.1 -0.3 -1 -3 -10 -30-2I -8-625 75 100 125 175 200
2sb757.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB757 DESCRIPTION With TO-3PN package High collector current Wide area of safe operation Complement to type 2SD847 APPLICATIONS Audio amplifications Serie regulators General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outli
2sb755.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB755 DESCRIPTION With MT-200 package Complement to type 2SD845 High transition frequency High breakdown voltage :VCEO=-150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and sy
2sb753.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB753 DESCRIPTION With TO-220C package Complement to type 2SD843 Low collector saturation voltage High power dissipation APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outl
2sb757.pdf
isc Silicon PNP Power Transistor 2SB757DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD847Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio amplifier applicationsSeries regulatorsGeneral
2sb755.pdf
isc Silicon PNP Power Transistor 2SB755DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD845Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle
2sb753.pdf
isc Silicon PNP Power Transistor 2SB753DESCRIPTIONHigh Collector Current:I = -7ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -4ACE(sat) CHigh Collector Power DissipationComplement to Type 2SD843Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsPower amplifier applicatio
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
