2SB76 - Даташиты. Аналоги. Основные параметры

Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD874 and 2SD874A Features Large collector power dissipation PC. 1.5 0.1 4.5 0.1 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45 Absolute Maximu

Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD874 and 2SD874A Features Large collector power dissipation PC. 1.5 0.1 4.5 0.1 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45 Absolute Maximu

UNISONIC TECHNOLOGIES CO., LTD 2SB766A PNP SILICON TRANSISTOR LOW FREQUENCY OUTPUT AMPLIFICATION FEATURES * Large collector power dissipation Pc. * Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Haloge

2SB766A PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Large collector power dissipation PC A C Complementary to 2SD874A D Collector PACKAGE INFORMATION Base Weight 0.05 g (approximately) I L H G Emitter Millimeter Millimeter

2SB764L PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE Power dissipation PCM 0.9 W (Tamb=25 ) Collector current ICM -1 A TO-92L Collector-base voltage V(BR)CBO -60 V G H 1Emitter Operating and storage junction temperature range 2Collector 3Base J TJ,

2SB766 PNP Silicon Elektronische Bauelemente Medium Power Transistor RoHS Compliant Product D D1 A SOT-89 b1 FEATURES b Power dissipation C e e1 P 500mW Tamb=25 CM 1.BASE Collector current 2.COLLECTOR Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max -1 A ICM 3.EMITTER A 1.400 1.600 0.055 0.063 Collector-base voltage b 0.

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 2SB764 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES General Purpose Switching Application 3. BASE Equivalent Circuit dot = Greenmolding compound device, if none, the normal device ORDERING INFORMATION Part N

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB766A TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Large collector power dissipation PC 1 Complementary to 2SD874A 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collec

JMnic Product Specification Silicon PNP Power Transistors 2SB761 2SB761A DESCRIPTION With TO-220C package Complement to type 2SD856/856A Low collector saturation voltage APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL P

JMnic Product Specification Silicon PNP Power Transistors 2SB762 2SB762A DESCRIPTION With TO-220C package Complement to type 2SD857/857A Low collector saturation voltage APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL P

2SB7 66A TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 2. COLLECTOR 1 Large collector power dissipation PC 2 Complementary to 2SD874A 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A

2SB7 66 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Large collector power dissipation PC 2. COLLECTOR 1 Complementary to 2SD874 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A

2SB766 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN Large collector power dissipation PC 0.53 0.40 0.48 0.44 2x) 0.13 B Complementary to 2SD874 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parame

2SB766A SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 3. EMITTER 1.8 1.4 1.4 3 2.6 4.25 2.4 3.75 Features 0.8 MIN Large collector power dissipation PC 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Complementary to 2SD874A 0.37 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Par

2SB766A PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Units Value Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1 A Collector Power dissipation PC mW 500 Junction Tempera

FM120-M WILLAS THRU 2SB766 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to TRANSI

SMD Type Transistors PNP Transistors 2SB766A Features 1.70 0.1 Large collector power dissipation PC Complimentary to 2SD874A. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current

SMD Type Transistors PNP Transistors 2SB767 Features 1.70 0.1 Large collector power dissipation PC High collector to emitter voltage VCEO. Complimentary to 2SD875 . 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitt

SMD Type Transistors PNP Transistors 2SB766 Features 1.70 0.1 Large collector power dissipation PC Complimentary to 2SD874. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 Collector Current -

SMD Type Transistors PNP Transistors 2SB768 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 High voltage VCEO=-150V Complimentary to 2SD1033. 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base

isc Silicon PNP Power Transistor 2SB763 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE High Collector Power Dissipation Complement to Type 2SD858 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon PNP Power Transistor 2SB761 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD856 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

isc Silicon PNP Darlington Power Transistor 2SB765 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -1.5A FE C Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -1.5A CE(sat) C Complement to Type 2SD864 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI

isc Silicon PNP Power Transistor 2SB760 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD855 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

isc Silicon PNP Power Transistor 2SB762 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD857 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB768 DESCRIPTION High voltage V =-150V CEO PNP silicon triple diffused transistor Complementary NPN types 2SD1033 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SB768 is designed for color TV vertical deflection output especially in hybrid