Справочник транзисторов. 2SB762B

 

Биполярный транзистор 2SB762B - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SB762B

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 40 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 160 °C

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO220

Аналоги (замена) для 2SB762B

 

 

2SB762B Datasheet (PDF)

4.1. 2sb762 2sb762a.pdf Size:192K _jmnic

2SB762B
2SB762B

JMnic Product Specification Silicon PNP Power Transistors 2SB762 2SB762A DESCRIPTION · ·With TO-220C package ·Complement to type 2SD857/857A ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25?) SYMBOL PARAME

5.1. 2sb768.pdf Size:190K _nec

2SB762B
2SB762B

5.2. 2sb766 e.pdf Size:43K _panasonic

2SB762B
2SB762B

Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD874 and 2SD874A Features Large collector power dissipation PC. 1.5 0.1 4.5 0.1 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45 Absolute Maximum Ratin

 5.3. 2sb767.pdf Size:38K _panasonic

2SB762B
2SB762B

Transistor 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD875 1.5 0.1 4.5 0.1 Features 1.6 0.2 Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and 45 automatic insertion through the tape packing and the magazine packing. 0.4 0.08

5.4. 2sb766.pdf Size:39K _panasonic

2SB762B
2SB762B

Transistor 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD874 and 2SD874A Features Large collector power dissipation PC. 1.5 0.1 4.5 0.1 1.6 0.2 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 45 Absolute Maximum Ratin

 5.5. 2sb767 e.pdf Size:42K _panasonic

2SB762B
2SB762B

Transistor 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD875 1.5 0.1 4.5 0.1 Features 1.6 0.2 Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and 45 automatic insertion through the tape packing and the magazine packing. 0.4 0.08

5.6. 2sb766a.pdf Size:152K _utc

2SB762B
2SB762B

UNISONIC TECHNOLOGIES CO., LTD 2SB766A PNP SILICON TRANSISTOR LOW FREQUENCY OUTPUT AMPLIFICATION FEATURES * Large collector power dissipation Pc. * Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen F

5.7. 2sb765k.pdf Size:368K _hitachi

2SB762B
2SB762B

5.8. 2sb764l.pdf Size:583K _secos

2SB762B
2SB762B

2SB764L PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ? Power dissipation PCM: 0.9 W (Tamb=25?) ? Collector current ICM: -1 A TO-92L ? Collector-base voltage V(BR)CBO: -60 V G H 1Emitter ? Operating and storage junction temperature range 2Collector 3Base J TJ, TSTG: -55? to

5.9. 2sb766.pdf Size:94K _secos

2SB762B
2SB762B

2SB766 PNP Silicon Elektronische Bauelemente Medium Power Transistor RoHS Compliant Product D D1 A SOT-89 b1 FEATURES b Power dissipation C e e1 P : 500mW Tamb=25 CM 1.BASE Collector current 2.COLLECTOR Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max : -1 A ICM 3.EMITTER A 1.400 1.600 0.055 0.063 Collector-base voltage b 0.320

5.10. 2sb766a.pdf Size:241K _secos

2SB762B
2SB762B

2SB766A PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES ? Large collector power dissipation PC A C ? Complementary to 2SD874A D Collector ?? PACKAGE INFORMATION ?? Base Weight: 0.05 g (approximately) I L H ?? G Emitter Millimeter Millimeter REF. REF. Min.

5.11. 2sb761 2sb761a.pdf Size:173K _jmnic

2SB762B
2SB762B

JMnic Product Specification Silicon PNP Power Transistors 2SB761 2SB761A DESCRIPTION · ·With TO-220C package ·Complement to type 2SD856/856A ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=25?) SYMBOL PARAME

5.12. 2sb763.pdf Size:265K _inchange_semiconductor

2SB762B
2SB762B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB763 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation ·Complement to Type 2SD858 APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO C

5.13. 2sb765.pdf Size:265K _inchange_semiconductor

2SB762B
2SB762B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB765 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1.5A ·Complement to Type 2SD864 APPLICATIONS ·Medium speed and power swi

5.14. 2sb760.pdf Size:262K _inchange_semiconductor

2SB762B
2SB762B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB760 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD855 APPLICATIONS ·Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base

5.15. 2sb766.pdf Size:227K _htsemi

2SB762B
2SB762B

2SB7 66 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Large collector power dissipation PC 2. COLLECTOR 1 Complementary to 2SD874 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Co

5.16. 2sb766a.pdf Size:260K _htsemi

2SB762B
2SB762B

2SB7 66A TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 2. COLLECTOR 1 Large collector power dissipation PC 2 Complementary to 2SD874A 3. EMITTER 3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC

5.17. 2sb766a sot-89.pdf Size:207K _lge

2SB762B
2SB762B

2SB766A SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 3. EMITTER 1.8 1.4 1.4 3 2.6 4.25 2.4 3.75 Features 0.8 MIN Large collector power dissipation PC 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Complementary to 2SD874A 0.37 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Paramete

5.18. 2sb766 sot-89.pdf Size:201K _lge

2SB762B
2SB762B

2SB766 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN Large collector power dissipation PC 0.53 0.40 0.48 0.44 2x) 0.13 B Complementary to 2SD874 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter V

5.19. 2sb766a.pdf Size:1026K _wietron

2SB762B
2SB762B

2SB766A PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS (TA=25? unless otherwise noted) Parameter Symbol Units Value Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1 A Collector Power dissipation PC mW 500 Junction Temperature

5.20. 2sb766.pdf Size:332K _willas

2SB762B
2SB762B

FM120-M WILLAS THRU 2SB766 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to TRANSISTO

5.21. 2sb766a.pdf Size:345K _willas

2SB762B
2SB762B

FM120-M WILLAS THRU 2SB766A SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H TRANSISTOR(PNP) urface mounted application in order to • L

5.22. 2sb767.pdf Size:895K _kexin

2SB762B
2SB762B

SMD Type Transistors PNP Transistors 2SB767 ■ Features 1.70 0.1 ● Large collector power dissipation PC ● High collector to emitter voltage VCEO. ● Complimentary to 2SD875 . 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitt

5.23. 2sb766.pdf Size:859K _kexin

2SB762B
2SB762B

SMD Type Transistors PNP Transistors 2SB766 ■ Features 1.70 0.1 ● Large collector power dissipation PC ● Complimentary to 2SD874. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 Collector Current -

5.24. 2sb768.pdf Size:1039K _kexin

2SB762B
2SB762B

SMD Type Transistors PNP Transistors 2SB768 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 ■ Features +0.2 5.30-0.2 +0.8 0.50 -0.7 ● High voltage:VCEO=-150V ● Complimentary to 2SD1033. 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base

5.25. 2sb766a.pdf Size:853K _kexin

2SB762B
2SB762B

SMD Type Transistors PNP Transistors 2SB766A ■ Features 1.70 0.1 ● Large collector power dissipation PC ● Complimentary to 2SD874A. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current

Другие транзисторы... 2SB760 , 2SB760A , 2SB760B , 2SB761 , 2SB761A , 2SB761B , 2SB762 , 2SB762A , BC109C , 2SB763 , 2SB763A , 2SB763B , 2SB764 , 2SB764D , 2SB764E , 2SB764F , 2SB765 .

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