2SB778 datasheet, аналоги, основные параметры
Наименование производителя: 2SB778 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO218
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2SB778 даташит
..1. Size:48K wingshing
2sb778.pdf 
2SB778 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Collector Dissipation P
..2. Size:195K jmnic
2sb778.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB778 DESCRIPTION With TO-3PML package Complement to type 2SD998 APPLICATIONS High power amplifier applications Recommended for 45 50W audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=2
..3. Size:537K cn sptech
2sb778.pdf 
SPTECH Product Specification 2SB778 SPTECH Silicon PNP Power Transistor DESCRIPTION Low Collector Saturation Voltage V = -0.5(V)(Max)@I = -5A CE(sat) C Good Linearity of h FE APPLICATIONS Designed for chopper regulator, switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -70 V CBO V Collector-E
9.1. Size:110K st
2sb772.pdf 
2SB772 PNP medium power transistor Features High current Low saturation voltage Complement to 2SD882 Applications 1 2 Voltage regulation 3 Relay driver SOT-32 (TO-126) Generic switch Audio power amplifier DC-DC converter Figure 1. Internal schematic diagram Description The device is a PNP transistor manufactured by using planar Technology re
9.3. Size:287K mcc
2sb772-r.pdf 
2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat
9.4. Size:287K mcc
2sb772-y.pdf 
2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat
9.5. Size:287K mcc
2sb772-gr.pdf 
2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat
9.6. Size:287K mcc
2sb772-o.pdf 
2SB772-R MCC 2SB772-O Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB772-Y Micro Commercial Components CA 91311 2SB772-GR Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat
9.7. Size:77K panasonic
2sb774.pdf 
Transistors 2SB0774 (2SB774) Silicon PNP epitaxial planar type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High emitter-base voltage (Collector open) VEBO Protective diodes and resistances between emitter and base can be omitted. 0.7 0.1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 0.45+0.15 0.45+0.15 0.1 0.1 Coll
9.8. Size:40K panasonic
2sb779 e.pdf 
Transistor 2SB779 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Low collector to emitter saturation voltage VCE(sat). Satisfactory linearity of hFE at the low collector voltage. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pac
9.10. Size:39K panasonic
2sb774 e.pdf 
Transistor 2SB774 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High emitter to base voltage VEBO. Protective diodes and resistances between emitter and base can be omitted. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 30 V 0.45 0.1 0.45 0.1 Collector t
9.12. Size:201K utc
2sb776.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SB776 PNP PLANAR TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB776 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High Current Output Up to 3A * Low Saturation Voltage * Complement to 2SD886 ORDERING INFORMATION Ordering N
9.13. Size:170K utc
2sb772.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number
9.14. Size:24K utc
2sb772l.pdf 
UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772L is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SD882L TO-92L 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C
9.17. Size:260K jiangsu
2sb776.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB776 TRANSISTOR (PNP) TO-126 FEATURES High Current Output Up to 3A 1. EMITTER Low Saturation Voltage Power Dissipation 2. COLLECTOR 3. BASE Equivalent Circuit B776=Device code Solid dot = Green molding compound device, if none, the normal device B776 XX XX=Code
9.18. Size:209K jmnic
2sb776.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB776 DESCRIPTION With TO-3PN package Complement to type 2SD896 Wide area of safe operation APPLICATIONS 100V/7A, AF 40W output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Tc=25 )
9.20. Size:164K lge
2sb776.pdf 
2SB776(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High current output up to 3A Low saturation voltage Power dissipation 2.500 7.400 2.900 1.100 7.800 1.500 MAXIMUM RATINGS (TA=25 unless otherwise noted ) 3.900 Symbol Parameter Value Units 3.000 4.100 VCBO Collector-Base Voltage -50 V 10.600 3.200 0.000 0.300 VCEO Collec
9.21. Size:170K wietron
2sb776 2sd886.pdf 
2SB776 2SD886 2SB776 PNP Epitaxial Planar Transistors 2SD886 NPN Epitaxial Planar Transistors TO-126 1.EMITTER P b Lead(Pb)-Free 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/2SB776 Unit NPN/2SD886 VCEO -50 50 V Collector-Emitter Voltage VCBO -50 50 V Collector-Base Voltage VEBO -5.0 5.0 V Emitter-Base Voltage IC -3.0 3.0 A Collector Curren
9.22. Size:687K wietron
2sb772 2sd882.pdf 
2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead(Pb)-Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/2SB772 Unit NPN/2SD882 VCEO -30 30 Vdc Collector-Emitter Voltage VCBO -40 40 Vdc Collector-Base Voltage VEBO -5.0 5.0 Vdc Emitter-Base Voltage IC(DC) -3.0 3.0 Adc Collector Current(DC) IC(Pulse) -7.0 7.0 Adc
9.25. Size:1586K blue-rocket-elect
2sb772t.pdf 
2SB772T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features V , ,h CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. / Applications 3 , ,
9.30. Size:341K blue-rocket-elect
2sb772m.pdf 
2SB772M(BR3CG772M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , hFE Low saturation voltage, excellent hFE linearity and high hFE. / Applications , ,
9.31. Size:709K semtech
st2sb772r.pdf 
ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 6 V -IC Collector Current 3 A O Total Power Dissipati
9.32. Size:178K semtech
2sb772u-r 2sb772u-q 2sb772u-p 2sb772u-e.pdf 
2SB772U PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Peak Collector Current
9.33. Size:668K semtech
st2sb772t.pdf 
ST 2SB772T PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current
9.34. Size:431K semtech
st2sb772u.pdf 
ST 2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Peak Collector Curre
9.35. Size:131K lrc
l2sb772q.pdf 
LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR L2SB772Q L2SB772P We declare that the material of product compliance with RoHS requirements. 4 1 2 3 DEVICE MARKING AND ORDERING INFORMATION SOT-89 Device Marking Shipping L2SB772Q 72Q 2500/Tape&Reel 2,4 L2SB772P 72P 2500/Tape&Reel COLLECTOR 1 MAXIMUM RATINGS(Ta=25 C) BASE Parameter Symbol Limits Unit 3 Collector-bas
9.36. Size:891K kexin
2sb772-126.pdf 
DIP Type Transistors PNP Tr ansistors 2SB772 TO-126 Unit mm 8.00 0.30 3.25 0.20 Features PNP transistor High current output up to 3A Low Saturation Voltage 3.20 0.10 Complement to 2SD882 (1.00) (0.50) 0.75 0.10 1.75 0.20 1.60 0.10 0.75 0.10 1 2 3 #1 +0.10 2.28TYP 2.28TYP 0.50 0.05 [2.28 0.20] [2.28 0.20] 1. Base 2. Collector 3. Emitte
9.37. Size:344K kexin
2sb772a.pdf 
SMD Type Transistors PNP Tr ansistors 2SB772A Features 1.70 0.1 PNP transistor High current output up to 3A Low Saturation Voltage Complement to 2SD882A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -70 V Collector to Emitter Voltage VCEO -60 V Emitter to Base V
9.38. Size:369K kexin
2sb772.pdf 
SMD Type Transistors T PNP Transistor 2SB772 TO-252 Unit mm Features +0.15 +0.1 6.50-0.15 2.30-0.1 PNP transistor High current output up to 3A +0.2 +0.8 5.30-0.2 0.50-0.7 Low Saturation Voltage 4 Complement to 2SD882 0.127 +0.1 max 0.80-0.1 2 3 1 +0.1 2.3 0.60-0.1 1. BASE +0.15 4.60-0.15 2. COLLECTOR 3. EMITTER 4. COLLECTOR Absolute Maximum Rati
9.39. Size:544K kexin
2sb779.pdf 
SMD Type Transistors PNP Transistors 2SB779 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-0.5A 1 2 Collector Emitter Voltage VCEO=-20V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Colle
9.40. Size:110K chenmko
2sb772gp.pdf 
CHENMKO ENTERPRISE CO.,LTD 2SB772GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). 4.6MAX. 1.6MAX.
9.41. Size:124K chenmko
2sb772zgp.pdf 
CHENMKO ENTERPRISE CO.,LTD 2SB772ZGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-73/SOT-223) SC-73/SOT-223 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time tstg= 1.0uSec (typ.) 1.65+0.15 * PC= 1.5 W (mounted on ceramic substrate). 6.5
9.42. Size:348K lzg
2sb772t 3ca772t.pdf 
2SB772T(3CA772T) PNP /SILICON PNP TRANSISTOR 3 , , /Purpose Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. V , ,h /Features Low saturation voltage, excellent h FE CE(sat) FE linearity and high h . FE
9.45. Size:256K lzg
2sb772s 3ca772s.pdf 
2SB772S(3CA772S) PNP /SILICON PNP TRANSISTOR 3 , , /Purpose Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. V , ,h /Features Low saturation voltage, excellent h FE CE(sat) FE linearity and high h . FE
9.46. Size:413K lzg
2sb772d 3ca772d.pdf 
2SB772D(3CA772D) PNP /SILICON PNP TRANSISTOR 3 , , Purpose Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. , h ./Features Low saturation voltage, excellent h linearity FE FE and high h . FE
9.47. Size:220K lzg
2sb772m 3ca772m.pdf 
2SB772M(3CG772M) PNP /SILICON PNP TRANSISTOR , , Purpose Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. , h /Features Low saturation voltage, excellent h linearity FE FE and high h . FE /Absolut
9.50. Size:5206K msksemi
2sb772-ms.pdf 
www.msksemi.com 2SB772-MS Semiconductor Compiance Semiconductor Compiance 1. BASE TRANSISTOR (PNP) 2. COLLETOR FEATURES Low speed switching 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A
9.51. Size:4731K msksemi
2sb772.pdf 
www.msksemi.com 2SB772 Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Low Speed Switching 2 1 3 TO-252-2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V 1. BASE VEBO Emitter-Base Voltage -6 V 2. COLLECTOR IC Collector Current -Continuous -3
9.52. Size:242K pjsemi
2sb772sq-r 2sb772sq-q 2sb772sq-p 2sb772sq-e.pdf 
2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbo
9.53. Size:490K cn evvo
2sb772-r 2sb772-q 2sb772-p 2sb772-e.pdf 
B772 PNP Transistors Features 3 PNP transistor High current output up to 3A 2 Low Saturation Voltage 1.Base 1 Complement to 2SD882 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V
9.54. Size:414K cn cbi
2sb772u.pdf 
2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications MARKING B772 O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC Collector Current 3 A -ICP Peak C
9.55. Size:801K cn juxing
2sb772sq.pdf 
2SB772SQ Silicon PNP Power Transistor Features High current output up to 3A Low saturation voltage Complement to 2SD882SQ SOT-89 PIN1 Base PIN 2 Collector PIN 3 Emitter Applications These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter Symbol
9.56. Size:219K inchange semiconductor
2sb775.pdf 
isc Silicon PNP Power Transistor 2SB775 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -85V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SD895 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 35W audio frequency output applications. ABSOL
9.57. Size:213K inchange semiconductor
2sb772.pdf 
isc Silicon PNP Power Transistor 2SB772 DESCRIPTION High Collector Current -I = -3A C High Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD882 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in the output stage of 3 watts a
Другие транзисторы: 2SB774, 2SB775, 2SB775D, 2SB775E, 2SB776, 2SB776D, 2SB776E, 2SB777, 431, 2SB779, 2SB77A, 2SB77AH, 2SB77H, 2SB78, 2SB780, 2SB781, 2SB782
