Биполярный транзистор 2SB788 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB788
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150(typ) MHz
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: SC71
2SB788 Datasheet (PDF)
2sb788 e.pdf
Transistor2SB788Silicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD9586.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Low noise voltage NV.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolu
2sb788.pdf
Transistors2SB0788 (2SB788)Silicon PNP epitaxial planar typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD0958 (2SD958) 2.50.16.90.1(1.0)(1.5)(1.5) FeaturesR 0.9 High collector-emitter voltage (Base open) VCEOR 0.7 Low noise voltage NV M type package allowing easy automatic and manual insertion aswell as stand-alone
2sb789.pdf
Transistors2SB0789, 2SB0789A (2SB789, 2SB789A)Silicon PNP epitaxial planar typeUnit: mmFor low-frequency driver amplification4.50.11.60.2 1.50.1 Features High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC1 230.40.08 0.50.08 0.40.041.50.1 Absolute Maximum Ratings Ta = 25C3Parameter Symbol Rating Unit2
2sb789 e.pdf
Transistor2SB789, 2SB789ASilicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SD968 and 2SD968A1.5 0.14.5 0.1Features1.6 0.2High collector to emitter voltage VCEO.Large collector power dissipation PC.45Absolute Maximum Ratings (Ta=25C)0.4 0.080.4 0.04Parameter Symbol Ratings Unit0.5 0.081.5 0.1Co
2sb789.pdf
SMD Type TransistorsPNP Transistors2SB789SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-100V Complementary to 2SD9680.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -100 Collector - Emitter Voltage VCE
2sb789a.pdf
SMD Type TransistorsPNP Transistors2SB789ASOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-120V Complementary to 2SD968A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage V
2sb783.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB783DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applica
2sb781.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB781DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOGood Linearity of hFEFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applica
2sb782.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB782DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applica
2sb786.pdf
INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB786DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -0.5A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswitching
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050