2SB789A - Даташиты. Аналоги. Основные параметры

SMD Type Transistors PNP Transistors 2SB789A SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-120V Complementary to 2SD968A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage V

Transistors 2SB0789, 2SB0789A (2SB789, 2SB789A) Silicon PNP epitaxial planar type Unit mm For low-frequency driver amplification 4.5 0.1 1.6 0.2 1.5 0.1 Features High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC 1 23 0.4 0.08 0.5 0.08 0.4 0.04 1.5 0.1 Absolute Maximum Ratings Ta = 25 C 3 Parameter Symbol Rating Unit 2

Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SD968 and 2SD968A 1.5 0.1 4.5 0.1 Features 1.6 0.2 High collector to emitter voltage VCEO. Large collector power dissipation PC. 45 Absolute Maximum Ratings (Ta=25 C) 0.4 0.08 0.4 0.04 Parameter Symbol Ratings Unit 0.5 0.08 1.5 0.1 Co

SMD Type Transistors PNP Transistors 2SB789 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-100V Complementary to 2SD968 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -100 Collector - Emitter Voltage VCE