Биполярный транзистор 2SB818 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB818
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 10000
Корпус транзистора: TO218
2SB818 Datasheet (PDF)
2sb815 2sd1048.pdf
Ordering number : ENN694F2SB815 / 2SD1048PNP / NPN Epitaxial Planar Silicon Transistors2SB815 / 2SD1048General-Purpose AF Amplifier ApplicationsFeaturesPackage Dimensions Ultrasmall package allows miniaturizationunit : mmin end products.2018B Large current capacity (IC=0.7A) and low-saturation[2SB815 / 2SD1048]voltage.0.40.1630 to 0.11 0.95 0.95 21.9
2sb817p 2sd1047p 2sd1047p.pdf
Ordering number : ENN65722SB817P / 2SD1047P2SB817P : PNP Epitaxial Planar Silicon Transistor2SD1047P : NPN Triple Diffused Planar Silicon Transistor2SB817P / 2SD1047P140V / 12A, AF80W Output ApplicationsFeaturesPackage Dimensions Capable of being mounted easily because of one- unit : mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817P
2sb810.pdf
2sb815 2sd1048.pdf
Ordering number : EN694H2SB815/2SD1048Bipolar Transistorhttp://onsemi.com() () ( ) ( )15V, 0.7A, Low VCE sat , PNP NPN Single CPFeatures Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage( ): 2SB815Specifications Absolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCol
2sb819 e.pdf
Transistor2SB819Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD10516.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5
2sb819.pdf
Transistor2SB819Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD10516.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5
2sb817.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB817 DESCRIPTION With TO-3PN package Complement to type 2SD1047 APPLICATIONS 140V/12A AF 60W output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS
2sb816.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB816 DESCRIPTION With TO-3PN package Complement to type 2SD1046 Wide area of safe operation APPLICATIONS For LF Power Amplifier, 50W Output Large Power Switching Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitte
2sb817c 2sd1047c.pdf
Ordering number : ENN69872SB817C/2SD1047CPNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SB817C/2SD1047C140V / 12A, AF 80W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SB817C/2SD1047C]15.63.24.814.02.0
2sb815.pdf
SMD Type TransistorsPNP Transistors2SB815SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 Large current capacity (IC=0.7A) and low-saturation voltage. Complimentary to 2SD1048.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO
2sb817d 2sb817e.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SB817DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1047APPLICATIONSRecommend for 60W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
2sb812.pdf
isc Silicon PNP Power Transistor 2SB812DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SD1032Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
2sb817e.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB817EDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1047EMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency
2sb817c.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB817CDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max.) @I = -5ACE(sat) CGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier outputstage a
2sb817.pdf
isc Silicon PNP Power Transistor 2SB817DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1047Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage
2sb813.pdf
isc Silicon PNP Power Transistor 2SB813DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle
2sb816.pdf
isc Silicon PNP Power Transistor 2SB816DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1046Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF power amplifier, 50W output large powerswitching applications.ABS
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050