Справочник транзисторов. 2SB818

 

Биполярный транзистор 2SB818 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB818
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 80 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 10000
   Корпус транзистора: TO218

 Аналоги (замена) для 2SB818

 

 

2SB818 Datasheet (PDF)

 9.1. Size:239K  sanyo
2sb815 2sd1048.pdf

2SB818
2SB818

Ordering number : ENN694F2SB815 / 2SD1048PNP / NPN Epitaxial Planar Silicon Transistors2SB815 / 2SD1048General-Purpose AF Amplifier ApplicationsFeaturesPackage Dimensions Ultrasmall package allows miniaturizationunit : mmin end products.2018B Large current capacity (IC=0.7A) and low-saturation[2SB815 / 2SD1048]voltage.0.40.1630 to 0.11 0.95 0.95 21.9

 9.2. Size:30K  sanyo
2sb817p 2sd1047p 2sd1047p.pdf

2SB818
2SB818

Ordering number : ENN65722SB817P / 2SD1047P2SB817P : PNP Epitaxial Planar Silicon Transistor2SD1047P : NPN Triple Diffused Planar Silicon Transistor2SB817P / 2SD1047P140V / 12A, AF80W Output ApplicationsFeaturesPackage Dimensions Capable of being mounted easily because of one- unit : mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817P

 9.3. Size:145K  nec
2sb810.pdf

2SB818
2SB818

 9.4. Size:190K  onsemi
2sb815 2sd1048.pdf

2SB818
2SB818

Ordering number : EN694H2SB815/2SD1048Bipolar Transistorhttp://onsemi.com() () ( ) ( )15V, 0.7A, Low VCE sat , PNP NPN Single CPFeatures Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage( ): 2SB815Specifications Absolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCol

 9.5. Size:51K  panasonic
2sb819 e.pdf

2SB818
2SB818

Transistor2SB819Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD10516.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5

 9.6. Size:47K  panasonic
2sb819.pdf

2SB818
2SB818

Transistor2SB819Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD10516.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5

 9.7. Size:199K  jmnic
2sb817.pdf

2SB818
2SB818

JMnic Product Specification Silicon PNP Power Transistors 2SB817 DESCRIPTION With TO-3PN package Complement to type 2SD1047 APPLICATIONS 140V/12A AF 60W output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS

 9.8. Size:241K  jmnic
2sb816.pdf

2SB818
2SB818

JMnic Product Specification Silicon PNP Power Transistors 2SB816 DESCRIPTION With TO-3PN package Complement to type 2SD1046 Wide area of safe operation APPLICATIONS For LF Power Amplifier, 50W Output Large Power Switching Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitte

 9.9. Size:445K  sanken-ele
2sb817c 2sd1047c.pdf

2SB818
2SB818

Ordering number : ENN69872SB817C/2SD1047CPNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SB817C/2SD1047C140V / 12A, AF 80W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SB817C/2SD1047C]15.63.24.814.02.0

 9.10. Size:960K  kexin
2sb815.pdf

2SB818
2SB818

SMD Type TransistorsPNP Transistors2SB815SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 Large current capacity (IC=0.7A) and low-saturation voltage. Complimentary to 2SD1048.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

 9.11. Size:196K  cn sptech
2sb817d 2sb817e.pdf

2SB818
2SB818

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SB817DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1047APPLICATIONSRecommend for 60W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 9.12. Size:220K  inchange semiconductor
2sb812.pdf

2SB818
2SB818

isc Silicon PNP Power Transistor 2SB812DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SD1032Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co

 9.13. Size:195K  inchange semiconductor
2sb817e.pdf

2SB818
2SB818

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB817EDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1047EMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency

 9.14. Size:195K  inchange semiconductor
2sb817c.pdf

2SB818
2SB818

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB817CDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max.) @I = -5ACE(sat) CGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier outputstage a

 9.15. Size:222K  inchange semiconductor
2sb817.pdf

2SB818
2SB818

isc Silicon PNP Power Transistor 2SB817DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1047Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage

 9.16. Size:212K  inchange semiconductor
2sb813.pdf

2SB818
2SB818

isc Silicon PNP Power Transistor 2SB813DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle

 9.17. Size:219K  inchange semiconductor
2sb816.pdf

2SB818
2SB818

isc Silicon PNP Power Transistor 2SB816DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1046Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for LF power amplifier, 50W output large powerswitching applications.ABS

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