2SB82 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SB82 Даташит. Аналоги

   Наименование производителя: 2SB82
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 70 °C
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: TO3

Аналог (замена) для 2SB82

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2SB82 Datasheet (PDF)

0.1. Size:395K 1
2sb821 2sb1276.pdf pdf_icon

0.2. Size:98K sanyo
2sb828.pdf pdf_icon

0.3. Size:113K sanyo
2sb824.pdf pdf_icon

0.4. Size:102K sanyo
2sb827 2sd1063.pdf pdf_icon

Ordering number:688HPNP/NPN Epitaxial Planar Silicon Tranasistors2SB827/2SD106350V/7A Switching ApplicationsaApplications Package Dimensions Universal high current switching as solenoid driving,unit:mmhigh speed inverter and converter.2022A[2SB827/2SD1063]Features Low collector-to-emitter saturation voltage : VCE(sat)=()0.4V max. Wide ASO.1 : Base2 : Co

0.5. Size:1246K rohm
2sb737 2sb821.pdf pdf_icon

0.6. Size:130K rohm
2sb1188 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf pdf_icon

TransistorsMedium power Transistor(*32V,*2A)2SB1188 / 2SB1182 / 2SB1240 /2SB822 / 2SB1277 / 2SB911MFFeatures FExternal dimensions (Unit: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1766 /2SD1758 / 2SD1862 / 2SD1189F /2SD1055 / 2SD1919 / SD1227M.FStructureEpitaxial planar typePNP silicon transistor(96-131-B24)2152SB1188

0.7. Size:213K jmnic
2sb828.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION With TO-3PN package Complement to type 2SD1064 Low collector saturation voltage Wide area of safe operation APPLICATIONS Relay drivers,high-speed inverters, converters,and other general high- current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2

0.8. Size:263K jmnic
2sb829.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB829 DESCRIPTION With TO-3PN package Complement to type 2SD1065 Wide area of safe operation Low collector saturation voltage : VCE(sat) =0.5V max. APPLICATIONS Relay drivers, High-speed inverters,converters General high-current switching applications PINNING PIN DESCRIPTION1 Base Collector

0.9. Size:206K jmnic
2sb824.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB824 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SD1060 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting

0.10. Size:229K jmnic
2sb826.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB826 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD1062 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, converters General high-current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mou

0.11. Size:241K jmnic
2sb827.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB827 DESCRIPTION With TO-3PN package Complement to type 2SD1063 Wide area of safe operation Low collector-emitter saturation voltage : VCE(sat)=()0.4V max. APPLICATIONS Universal high current switching as solenoid driving,high speed inverter and converter. PINNING PIN DESCRIPTION1 Base Col

0.12. Size:204K jmnic
2sb825.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB825 DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SD1061 APPLICATIONS Universal high current switching as solenoid driving;high speed inverter and converter applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum

0.13. Size:220K inchange semiconductor
2sb828.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB828DESCRIPTIONHigh Collector Current:: I = -12ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -6ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1064Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,converters,and o

0.14. Size:221K inchange semiconductor
2sb829.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB829DESCRIPTIONHigh Collector Current:I = -15ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -8ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1065Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,converters,and oth

0.15. Size:218K inchange semiconductor
2sb824.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB824DESCRIPTIONHigh Collector Current: I = -5ACLow Collector Saturation Voltage: V = -0.4V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1060APPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other gereral large-current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)

0.16. Size:187K inchange semiconductor
2sb823.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB823DESCRIPTIONCollector-Emitter Breakdown VoltageV = -100V(Min)(BR)CEOLow Collector Saturation Voltage: V = -1.5V(Max)@I = -6ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifer and

0.17. Size:217K inchange semiconductor
2sb826.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB826DESCRIPTIONHigh Collector Current:: I = -12ACLow Collector Saturation Voltage: V = -0.5V(Max)@I = -6ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1062Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and

0.18. Size:221K inchange semiconductor
2sb827.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB827DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -0.4V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1063Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUniversal high current switching as solenoid driving, highspeed i

0.19. Size:217K inchange semiconductor
2sb825.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB825DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -0.4V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1061APPLICATIONSUniversal high current switching as solenoid driving, highspeed inverter and converter.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Другие транзисторы... 2SB816 , 2SB816D , 2SB816E , 2SB817 , 2SB817D , 2SB817E , 2SB818 , 2SB819 , 2N4401 , 2SB820 , 2SB821 , 2SB822 , 2SB823 , 2SB824 , 2SB824Q , 2SB824R , 2SB824S .