Справочник транзисторов. 2SB830

 

Биполярный транзистор 2SB830 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB830
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.9 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 135 °C
   Статический коэффициент передачи тока (hfe): 150
   Корпус транзистора: TO92

 Аналоги (замена) для 2SB830

 

 

2SB830 Datasheet (PDF)

 9.1. Size:38K  renesas
2sb831.pdf

2SB830
2SB830

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.2. Size:39K  panasonic
2sb835 e.pdf

2SB830
2SB830

Transistor2SB835Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45

 9.3. Size:203K  utc
2sb834.pdf

2SB830
2SB830

UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB834L-x-AB3-R 2SB834G-x-AB3-R SOT-89 B C E Tape Reel2SB834L-x-T60-K 2SB834G-x-T60-K TO-126 E C B Bulk2SB834L-x-TA3-T 2SB834G-x-T

 9.4. Size:118K  mospec
2sb834.pdf

2SB830
2SB830

AAA

 9.5. Size:60K  secos
2sb834.pdf

2SB830

2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free ITO-220J FEATURES Power switching applications B NDECLASSIFICATION OF hFE Product-Rank 2SB834-O 2SB834-Y M A60~120 100~200 Range H J CKGCollector L L F2 Millimeter Millimeter REF. REF. Min. M

 9.6. Size:1974K  jiangsu
2sb834.pdf

2SB830
2SB830

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SB834 TRANSISTOR (PNP) TO-220-3L FEATURES 1. BASE Low Collector -Emitter Saturation Voltage 2. COLLECTOR VCE(sat)=1.0V(Max)@ IC=-3A,IB=-0.3A DC current Gain 3. EMITTER hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (Ta=25 unless otherwise noted)

 9.7. Size:188K  jmnic
2sb834.pdf

2SB830
2SB830

JMnic Product Specification Silicon PNP Power Transistors 2SB834 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD880 APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC

 9.8. Size:263K  lge
2sb834.pdf

2SB830
2SB830

2SB834(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A DC current Gain hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO -60 V

 9.9. Size:169K  wietron
2sb834.pdf

2SB830
2SB830

2SB834PNP Silicon Epitaxial Power TransistorP b Lead(Pb)-FreeCOLLECTOR2 Features:1BASE2* DC Current Gain hFE = 60-200 @IC = 0.5A31* Low VCE(sat) 1.0V(MAX) @IC = 3.0A, IB = 0.3A1. BASE2. COLLECTOR* Complememtary to NPN 2SD8803. EMITTER3TO-220EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Value UnitVCBOCollector to Base Voltage-60 VVC

 9.10. Size:505K  jilin sino
2sb834.pdf

2SB830
2SB830

PNP PNP Epitaxial Silicon Transistor R2SB834 APPLICATIONS Audio frequency power amplifer applications FEATURES High DC Current Gain 2SD880 Complementary to 2SD880 RoHS RoHS product Package TO-220 TO-220C ORDER MESSAGE

 9.11. Size:466K  blue-rocket-elect
2sb834i.pdf

2SB830
2SB830

2SB834I(BR3CA834I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features , 2SD880I(BR3DD880I) Low collector saturation voltage, collector power dissipation, complementary to2SD880I(BR3DD880I). / Applications

 9.12. Size:326K  kexin
2sb831.pdf

2SB830

SMD Type TransistorsPNP Transistors2SB831SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-0.7A1 2 Collector Emitter Voltage VCEO=-20V+0.1+0.050.95 -0.1 0.1 -0.01+0.1 Complementary to 2SD11011.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

 9.13. Size:246K  lzg
2sb834 3ca834.pdf

2SB830
2SB830

2SB834(3CA834) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency power amplifier applications. :, 2SD880(3DD880) Features: Low collector saturation voltage, collector power dissipation, complementary to 2SD880(3DD880) /Absolute maximum ratings(Ta=25)

 9.14. Size:218K  inchange semiconductor
2sb834.pdf

2SB830
2SB830

isc Silicon PNP Power Transistor 2SB834DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -3.0ACE(sat) CComplementary to 2SD880Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifierapplicati

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 

Back to Top