Биполярный транзистор 2SB834O - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB834O
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 9 MHz
Ёмкость коллекторного перехода (Cc): 134 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO220
2SB834O Datasheet (PDF)
2sb834.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB834L-x-AB3-R 2SB834G-x-AB3-R SOT-89 B C E Tape Reel2SB834L-x-T60-K 2SB834G-x-T60-K TO-126 E C B Bulk2SB834L-x-TA3-T 2SB834G-x-T
2sb834.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free ITO-220J FEATURES Power switching applications B NDECLASSIFICATION OF hFE Product-Rank 2SB834-O 2SB834-Y M A60~120 100~200 Range H J CKGCollector L L F2 Millimeter Millimeter REF. REF. Min. M
2sb834.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SB834 TRANSISTOR (PNP) TO-220-3L FEATURES 1. BASE Low Collector -Emitter Saturation Voltage 2. COLLECTOR VCE(sat)=1.0V(Max)@ IC=-3A,IB=-0.3A DC current Gain 3. EMITTER hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (Ta=25 unless otherwise noted)
2sb834.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JMnic Product Specification Silicon PNP Power Transistors 2SB834 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SD880 APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC
2sb834.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SB834(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A DC current Gain hFE =60-200@ IC=0.5A Complementary to NPN 2SD880 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO -60 V
2sb834.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SB834PNP Silicon Epitaxial Power TransistorP b Lead(Pb)-FreeCOLLECTOR2 Features:1BASE2* DC Current Gain hFE = 60-200 @IC = 0.5A31* Low VCE(sat) 1.0V(MAX) @IC = 3.0A, IB = 0.3A1. BASE2. COLLECTOR* Complememtary to NPN 2SD8803. EMITTER3TO-220EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Value UnitVCBOCollector to Base Voltage-60 VVC
2sb834i.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SB834I(BR3CA834I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features , 2SD880I(BR3DD880I) Low collector saturation voltage, collector power dissipation, complementary to2SD880I(BR3DD880I). / Applications
2sb834 3ca834.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2SB834(3CA834) PNP /SILICON PNP TRANSISTOR : Purpose: Audio frequency power amplifier applications. :, 2SD880(3DD880) Features: Low collector saturation voltage, collector power dissipation, complementary to 2SD880(3DD880) /Absolute maximum ratings(Ta=25)
2sb834.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon PNP Power Transistor 2SB834DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -3.0ACE(sat) CComplementary to 2SD880Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for use in audio frequency power amplifierapplicati
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .